Foodborne disease outbreaks in Australia 2001-2009

BACKGROUND: Analysis of surveillance data from foodborne disease outbreaks can help identify high-risk aetiological agents, food vehicles and settings. This information may help prevent future illness by informing the development of public health policy

Melatonin and sleep responses following exercise in elite female athletes

To determine the melatonin concentrations and subsequent sleep indices of elite netball athletes following a training day when compared to a control day. Ten elite female netball athletes (mean ± SD; age = 23 ± 6 yrs) provided saliva samples PRE (17:15h) and POST (22:00h) a training session, and a day with no training (CONTROL). Sleep monitoring was performed using wrist actigraphy to assess total time in bed (TTB), total sleep time (TST), sleep efficiency (SE) and sleep latency (SL). Melatonin levels were significantly lower (p < 0.05), both PRE and POST the training condition (6.2 and 17.6 pg/mL, respectively) when compared to the CONTROL (14.8 and 24.3 pg/mL, respectively). There were no significant differences observed between conditions for any of the sleep variables. However, a small reduction in TST could be observed following the training session condition compared to the CONTROL condition. The scheduling of netball training in the evening is shown to suppress salivary melatonin levels. This may have an influence on subsequent sleep following night-time exercise

Obligations to Report Outbreaks of Foodborne Disease under the International Health Regulations (2005)

Every year, Australia identifies 2–3 outbreaks associated with imported foods. To examine national authorities’ obligations under the International Health Regulations (2005), we reviewed outbreaks in 2001–2007 that implicated internationally distributed foods. Under these regulations, 6 (43%) of 14 outbreaks would have required notification to the World Health Organization

A systematic study of (NH4)(2)S passivation (22%, 10%, 5%, or 1%) on the interface properties of the Al2O3/In0.53Ga0.47As/InP system for n-type and p-type In0.53Ga0.47As epitaxial layers

In this work, we present the results of an investigation into the effectiveness of varying ammonium sulphide (NH4)(2)S concentrations in the passivation of n-type and p-type In0.53Ga0.47As. Samples were degreased and immersed in aqueous (NH4)(2)S solutions of concentrations 22%, 10%, 5%, or 1% for 20 min at 295 K, immediately prior to atomic layer deposition of Al2O3. Multi-frequency capacitance-voltage (C-V) results on capacitor structures indicate that the lowest frequency dispersion over the bias range examined occurs for n-type and p-type devices treated with the 10% (NH4)(2)S solution. The deleterious effect on device behavior of increased ambient exposure time after removal from 10% (NH4)(2)S solution is also presented. Estimations of the interface state defect density (D-it) for the optimum 10% (NH4)(2)S passivated In0.53Ga0.47As devices extracted using an approximation to the conductance method, and also extracted using the temperature-modified high-low frequency C-V method, indicate that the same defect is present over n-type and p-type devices having an integrated D-it of similar to 2.5 x 10(12) cm(-2) (+/- 1 x 10(12) cm(-2)) with the peak density positioned in the middle of the In0.53Ga0.47As band gap at approximately 0.37 eV (+/- 0.03 eV) from the valence band edge. Both methods used for extracting D-it show very good agreement, providing evidence to support that the conductance method can be applied to devices incorporating high-k oxides on In0.53Ga0.47As. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3533959

In situ H(2)S passivation of In(0.53)Ga(0.47)As/InP metal-oxide-semiconductor capacitors with atomic-layer deposited HfO(2) gate dielectric

We have studied an in situ passivation of In(0.53)Ga(0.47)As, based on H(2)S exposure (50-350 degrees C) following metal organic vapor phase epitaxy growth, prior to atomic layer deposition of HfO(2) using Hf[N(CH(3))(2)](4) and H(2)O precursors. X-ray photoelectron spectroscopy revealed the suppression of As oxide formation in air exposed InGaAs surfaces for all H(2)S exposure temperatures. Transmission electron microscopy analysis demonstrates a reduction of the interface oxide between the In(0.53)Ga(0.47)As epitaxial layer and the amorphous HfO(2) resulting from the in situ H(2)S passivation. The capacitance-voltage and current-voltage behavior of Pd/HfO(2)/In(0.53)Ga(0.47)As/InP structures demonstrates that the electrical characteristics of samples exposed to 50 degrees C H(2)S at the end of the metal-organic vapor-phase epitaxy In(0.53)Ga(0.47)As growth are comparable to those obtained using an ex situ aqueous (NH(4))(2)S passivation. (c) 2008 American Institute of Physics. (DOI: 10.1063/1.2829586

Waterparks are high risk for cryptosporidiosis: A case-control study in Victoria, 2015

BACKGROUND: An increase in notifications of cryptosporidiosis was observed in Victoria between March and April 2015. Cases mostly resided in one metropolitan region and hypothesis-generating interviews identified common exposures to aquatic facilities. We conducted a case-control study to determine exposure source(s) and facilitate control measures. METHODS: Laboratory-confirmed cases of cryptosporidiosis from the region of interest notified between 1 March and 23 April 2015 were included. Controls residing in the same region were recruited from participants in a population health survey and frequency matched (2 per case) by age group. Details of exposure to potential risk factors were collected using a standardised telephone questionnaire for the 14-days prior to illness for cases, and an analogous exposure period for controls. Univariable and multivariable logistic regression were used to determine risk factors associated with illness using STATA SE 13.1. RESULTS: Thirty cases and 66 controls were included in the study. Half the cases were less than 12 years of age and 62% were female. Illness was most strongly associated with recreational water exposure at any waterpark (adjusted odds ratio (aOR)=73.5; 95% confidence interval (CI):6.74-802), and specifically at Victorian waterparks (aOR=45.6; 95% CI:5.20-399). Cases were linked with attendance at either a waterpark in the region or an adjacent region. As a result of this investigation, hyperchlorination was completed at identified facilities and swim hygiene information distributed. CONCLUSION: This study reinforces the potential for recreational water facilities, particularly waterparks, to act as a transmission source of Cryptosporidium infections. Continued communication to patrons is required to ensure healthy swimming practice in Victorian aquatic facilities

High-Grade Gastroenteropancreatic Neuroendocrine Neoplasms and Improved Prognostic Stratification With the New World Health Organization 2019 Classification A Validation Study From a Single-Institution Retrospective Analysis

Objectives: There is a pressing need to develop clinical management pathways for grade 3 (G3) gastroenteropancreatic neuroendocrine neoplasms (GEP NEN). Methods: We performed a retrospective study on patients with metastatic G3 GEP NEN. The relationship between baseline characteristics and progression-free survival and overall survival was analyzed using the Kaplan-Meier method. Univariate and multivariate analyses were performed using the Cox proportional hazards model. Results: We included 142 patients (74 well-differentiated neuroendocrine tumors [WDNETs], 68 poorly differentiated neuroendocrine carcinomas [PDNECs]). Patients with WDNET had prolonged survival compared with PDNEC (median, 24 vs 15 months, P = 0.0001), which persisted in both pancreatic and nonpancreatic cohorts. Well-differentiated morphology, Ki-67 <50% and positive somatostatin receptor imaging were independently associated with prolonged survival. Of the subgroup treated with first-line platinum-based chemotherapy, response rates were favorable (partial response, 47%; stable disease, 30%); there was no significant difference in response rates nor progression-free survival between WDNET and PDNEC despite significantly prolonged overall survival in the WDNET cohort. Conclusions: Our study corroborates the knowledge of 2 prognostically distinct subgroups within the World Health Organization 2019 G3 GEP NEN population, observed in both pancreatic and nonpancreatic gastrointestinal cohorts. Definitive management pathways are needed to reflect the differences between G3 WDNET and PDNEC

Structural analysis, elemental profiling, and electrical characterization of HfO2 thin films deposited on In0.53Ga0.47As surfaces by atomic layer deposition

In this work results are presented on the structural analysis, chemical composition, and interface state densities of HfO2 thin films deposited by atomic layer deposition (ALD) from Hf[N(CH3)(2)](4) and H2O on In0.53Ga0.47As/InP substrates. The structural and chemical properties are investigated using high resolution cross-sectional transmission electron microscopy and electron energy loss spectroscopy. HfO2 films (3-15 nm) deposited on In0.53Ga0.47As are studied following a range of surface treatments including in situ treatment of the In0.53Ga0.47As surface by H2S exposure at 50-350 degrees C immediately following the metal organic vapor phase epitaxy growth of the In0.53Ga0.47As layer, ex situ treatment with (NH4)(2)S, and deposition on the native oxides of In0.53Ga0.47As with no surface treatment. The structural analysis indicates that the In0.53Ga0.47As surface preparation prior to HfO2 film deposition influences the thickness of the HfO2 film and the interlayer oxide. The complete interfacial self-cleaning of the In(0.53)Gas(0.47)As native oxides is not observed using an ALD process based on the Hf[N(CH3)(2)](4) precursor and H2O. Elemental profiling of the HfO2/In0.53Ga0.47As interface region by electron energy loss spectroscopy reveals an interface oxide layer of 1-2 nm in thickness, which consists primarily of Ga oxides. Using a conductance method approximation, peak interface state densities in the range from 6 x 10(12) to 2 x 10(13) cm(-2) eV(-1) are estimated depending on the surface preparation. (C) 2009 American Institute of Physics. [doi:10.1063/1.3243234